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  1. link.aps.org

    We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene ...
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  3. 1 Gate electrostatics and quantum capacitance in ballistic graphene devices José M. Caridad 1†, Stephen R. Power 2,3,4, Artsem A. Shylau 1, Lene Gammelgaard , Antti-Pekka Jauho 1, Peter Bøggild 1 1Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark 2Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC ...
  4. orbit.dtu.dk

    that such quantum capacitance contribution, occurring due to the low density of states across the device in the presence of an external magnetic field, is considerably altered as a result of the gate electrostatics in the ballistic graphene device. Our conclusions can be extended to any two-dimensional (2D) electronic system confined by
  5. researchgate.net

    We show that such quantum capacitance contribution, occurring due to the low density of states (DOS) across the device in the presence of an external magnetic field, is considerably altered as a ...
  6. researchgate.net

    Most interest- ingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the lateral graphene side gates, giving rise to an unconventional negative ...
  7. portalrecerca.uab.cat

    By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. In contrast, devices with lower edge disorder (<1nm roughness) are strongly influenced by the ...
  8. semanticscholar.org

    This work was supported by the Danish National Research Foundation Center for Nanostructured Graphene (Project No. DNRF103) and the Union's Horizon 2020 research and innovation programme (Grant No. GrapheneCore2 785219). J.M.C. acknowledges funding from the Otto Monsteds Fond. S.R.P. acknowledges funding from the European Union's Horizon 2020 research and innovation programme under Marie ...
  9. digital.csic.es

    This work was supported by the Danish National Research Foundation Center for Nanostructured Graphene (Project No. DNRF103) and the Union's Horizon 2020 research and innovation programme (Grant No. GrapheneCore2 785219). J.M.C. acknowledges funding from the Øtto Monsteds Fond. S.R.P. acknowledges funding from the European Union's Horizon 2020 research and innovation programme under Marie ...
  10. orbit.dtu.dk

    Gate electrostatics and quantum capacitance in ballistic graphene device Jose Caridad * , Stephen R. Power, Artsem Shylau, Lene Gammelgaard, Antti-Pekka Jauho, Peter Bøggild * Corresponding author for this work
  11. ouci.dntb.gov.ua

    Gate electrostatics and quantum capacitance in ballistic graphene devices. https: ... Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications ... Unraveling the electronic properties of graphene with substitutional oxygen David M A Mackenzie, Miriam Galbiati, Xabier D de Cerio, I Y Sahalianov ...
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