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  1. ieeexplore.ieee.org

    This article aims to develop an algorithm for de-skewing the measured data to determine the switching loss of the device accurately and quickly. The algorithm also estimates the effective parasitic inductance of the switching path. To validate the proposed algorithm, a DPT setup is developed using GaN HEMT devices of 650 V/30 A.
  2. ncpre.iitb.ac.in

    NCPRE has developed an algorithm to precisely de-skew the DPT waveform to calculate the switching energy loss devices. The proposed algorithm does not necessitate any modifications to the circuit structure, making it a cost-effective and simple solution. Additionally, the proposed algorithm is independent of the switching voltage and current ...
  3. ieeexplore.ieee.org

    Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit Abstract: In power conversion applications using GaN HEMT with high switching frequency, switching loss dominates in total power loss and could be very sensitive to parasitic parameters as a result of fast-switching operation. Since conventional switching ...
  4. digibuo.uniovi.es

    GaN power loss modelling [24]. Several precise and accurate analytical switching models for e-mode GaN HEMTs have been introduced in [12], [13], [25]. In [25], the model studied the effects of gate resistance, gate supply voltage, and parasitic inductances on switching losses. In addition, a novel current measuring method based
  5. sciencedirect.com

    For that, an accurate model is necessary. In the literature, several behavioral models of GaN transistor have been proposed. References [5] and [6] show a simple and accurate segmented behavioral model, which include the important static parameters of the GaN HEMTs. However, these models suffer from the discontinuity of the simulated curves, because the used equations are divided into three ...
  6. gansystems.com

    the GaN-based hard-switching half-bridge. Results show that the switching losses, on. and . E E. off. are the dominant loss factors with high switching frequency. At last, the possible efficiency improvements are also discussed in detail. Index TermsGaN HEMT, half — -bridge, dynamic on-state resistance, hard -switching, power loss modeling ...
  7. cn.gansystems.com

    loss of GaN HEMT is significantly lower compared with Si MOSFET. • Experimental results verify the . E. qoss. loss calculation method and also prove that the loss is only a function of voltage and the corresponding capacitances. • The accurate . E. qoss. loss calculation yields a more accurate . E. on. loss estimation, especially under ...
  8. nexperia.com

    Might sound obvious but is extra important at low switching losses: •Probe compensation to prevent amplitude errors •Custom de-skewing between current and voltage probe •Removal of offset •Running at max. bandwidth •Using the full vertical scale •Acquisition mode: Either can work but Hi-Res or averaging can help
  9. ieeexplore.ieee.org

    Gallium nitride (GaN) high electron mobility transistor (HEMT) is a promising candidate for the high-density power converter applications. Due to the low switching loss, the GaN HEMT may lead to a new horizon in the applications, such as fast charger, wireless charging, and 5G power amplifier. However, the fast switching speed of GaN HEMT makes it extremely sensitive to parasitic parameters ...
  10. tenglong.eng.cam.ac.uk

    A. Swtiching Loss Breakdown of GaN HEMTs Typical hard-switching (HS) waveforms of a GaN HEMT are shown in Fig. 1(a) and (b), and the measured switching losses of paralleled GaN HEMTs (GS66508T1, GS66508T2, and GS66516T1) are shown in Fig. 1(c). As can be seen, both the turn-on and turn-off energy losses E on and E

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