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  1. ieeexplore.ieee.org

    Aug 22, 2024The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network (FCN) has been identified in the central area of the IGBT modules' solder layer. In this article, to investigate the formation mechanism of the FCN, a fast power cycling test (PCT) (current on 0.2 s and ...
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  3. researchgate.net

    Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test . Shenyi Liu, ... This work was supported in part by the PowerizeD project, which has been ...
  4. researchgate.net

    Dec 1, 2024The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network (FCN ...
  5. research.aalto.fi

    LIU et al.: FATIGUE CRACK NETWORKS IN DIE-ATTACH LAYERS OF IGBT MODULES UNDER A POWER CYCLING TEST 16697 TABLE I MATERIALS PHYSICAL PROPERTIES Fig. 3. Schematic of FE model of IGBT module (a) in 3-D, pure Si domain as the heat source, (b) in cross-section, with Si (5.2 mm ×5mm×0.114 mm), SAC solder layer (5.2 mm × 5mm× 0.068 mm), top DBC Cu ...
  6. research.aalto.fi

    Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test. / Liu, Shenyi; Vuorinen, Vesa; Liu, Xing et al. In: IEEE Transactions on Power Electronics, Vol. 39, No. 12, 2024, p. 16695-16707. Research output: Contribution to journal › Article › Scientific › peer-review.
  7. link.springer.com

    Fig. 2. Photograph of the power cycling test. The total strain energy density range DW calculated Fig. 3. FEM analysis model (1/2 symmetry): (a) overall view of IGBT module, (b) cross-section of IGBT module. Fatigue Crack Networks in the Die-Attach Joint of a Power Semiconductor Module During
  8. ui.adsabs.harvard.edu

    Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test ... Abstract. Publication: IEEE Transactions on Power Electronics. Pub Date: December 2024 DOI: 10.1109/TPEL.2024.3447909 ... cfa.harvard.edu The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative ...
  9. link.springer.com

    The fracture mechanisms of a Sn-Ag-Cu lead-free solder joint and the effects of test parameters on power cycling life were investigated. In this study, three levels of average temperature (348, 373 and 398 K), two levels of each of current on-and-off time (2 s/10 s and 5 s/22 s), and three levels of ΔT j (75, 100 and 125 K) were used. Because the thermal expansion of the die-attach material ...
  10. Sep 15, 2024Under fatigue load, insulated gate bipolar transistor (IGBT) experience structural damage and performance degradation, impacting the reliability of power electronic systems. To address this, the relationship between solder layer fatigue crack length and thermal resistance is derived based on heat transfer theory, firstly.

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