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  1. Jan 25, 2024The headline advance in High NA EUV lithography is the new optics. The 'NA' in the name refers to numerical aperture - a measure of the ability of an optical system to collect and focus light. And it's called High NA EUV because we've increased the NA from 0.33 in our NXE systems to 0.55 in EXE systems.
  2. techbang.com

    Jun 15, 2024在最近的一次演講中,ASML 前總裁 Martin van den Brink 宣佈了公司的新"Hyper-NA"EUV 技術計畫,該技術將接替剛剛開始部署的 High-NA EUV 系統。 Hyper-NA工具仍處於早期研究階段,它將把數值孔徑從High-NA的0.55提高到0.75,使晶片的電晶體密度在2030年代初超過High-NA的預計 ...
  3. Apr 18, 2024Intel Adds ASML's First High NA EUV Tool to Oregon Factory. ASML's High Numerical Aperture (High NA) Extreme Ultraviolet (EUV) lithography scanner sits in Intel Oregon's D1X test manufacturing factory, where it is going through its final calibration. It is as big as a double-decker bus and weighs as much as a blue whale.
  4. Jun 3, 2024For imec and its partners, the High NA EUV Lithography Lab will act as a virtual extension of our 300 mm cleanroom in Leuven, enabling us to further improve the patterning ecosystem and push the resolution of the High NA EUV towards its ultimate limits." ASML's President and CEO Christophe Fouquet: "The ASML-imec High NA EUV Lithography Lab ...
  5. techpowerup.com

    Jun 13, 2024The higher the NA the smaller the die you can produce. Already, high NA=0.55 halves the die size compared to low NA=0.33. That is not the case for multi-patterning which up until at least 2nm is still cheaper than high NA EUV and far less complex. NA=0.75 will probably halve the die size again down to 220mm^2.
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  7. Feb 17, 2024縮小晶片的電晶體尺寸,這對於晶片性能的持續發展至關重要。因此,半導體產業正在研究各種方法來縮小電晶體的尺寸。未來幾年,晶片製造商將採用 ASML 最新的 High-NA EUV 微影曝光設備,藉以進行 3 奈米後製造節點的技術發展。但接下來呢? ASML 表示,目前正在發展 Hyper-NA,並尋找...
  8. euvlitho.com

    Next logical step on lithography roadmap is a High-NA EUV system NXE:3400. High-NA +67%. NXE:3600. Carl Zeiss SMT GmbH, Lars Wischmeier, Paul Graeupner, Peter Kuerz, Judon Stoeldrajier, Jan van Schoot 2021-06-10 4 ... The high-NA teams at ASML and ZEISS. Our suppliers, customers, and project partners around the globe ...
  9. Apr 18, 2024最新發文和照片,High-NA EUV 系統成功列印出第一條 10 奈米密集線(dense lines),官網提到理論極限是 8 奈米。 目前全球有兩套 High-NA EUV 設備,一套在 ASML 荷蘭總部 Veldhoven 製造,該公司與 Imec 有個 High-NA 聯合實驗室;另一套在英特爾美國奧勒岡州 D1X 晶圓廠組裝。
  10. Jun 13, 2024Now, ASML aims to introduce Hyper-NA by 2030, achieving 0.75 NA. This marks the first inclusion of Hyper-NA EUV in ASML's roadmap, as noted by Kurt Ronse, Director of Imec's Advanced Patterning ...
  11. euvlitho.com

    High-NA Mask Stage solution for increased acceleration Improved motor technology & different -light weight- architecture 185 125 • ref 870% 390% ∞! Further Optimizing power consumption: • New stage architecture with lower mass Limiting increasing power by: • Improved motor technology (k, R) Reduce mass Current RS in High-NA Power: ref
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